Sapphire Substrate C-Plane Al2O3 Single Crystal

Description

Sapphire Substrate — C-Plane (0001) for GaN Epitaxy & LED Research

Single-crystal α-Al₂O₃ (sapphire) substrates in C-plane (0001) orientation — the industry standard substrate for GaN-based LED epitaxy (MOCVD), high-electron-mobility transistor (HEMT) research, and power electronics fabrication. Malaysia’s LED and power electronics research programmes use C-plane sapphire as the foundational substrate.

Key Specifications

• Material: Single-crystal α-Al₂O₃ (sapphire)
• Orientation: C-plane (0001) ± 0.5° (epi-ready orientation cut)
• Standard sizes: 2″ (50.8 mm), 4″ (100 mm), 6″ (150 mm) diameter
• Thickness: 430 µm (2″), 650 µm (4″), 1000 µm (6″)
• Polish: Single-side polished (SSP) epi-ready, Ra < 0.5 nm
• Off-cut: 0°, 0.2°, 0.35° (customizable)

Applications

• GaN-on-sapphire LED and laser diode epitaxy
• AlGaN/GaN HEMT power electronics
• GaN RF device research
• Oxide thin-film growth (ZnO, Ga₂O₃)

Specify size, orientation, off-cut angle, and polish type. Cleanroom-packaged. Certificate of orientation provided.